Characterization of micromechanical structures using white-light interferometry

Abstract

As microelectromechanical systems (MEMS) move rapidly towards commercialization, the issue of mechanical characterization has emerged as am ajorconsideration in device design and fabrication. It is now common to includ eas et of teststructures on a MEMS wafer for extraction of thin film material properties (in particular, residual stress, stress gradient and Young's modulus), and for process and device monitoring. These structures usually consist of micromachined beams and strain gauges. Measurement techniques include tensile testing, scanning electron microscopy (SEM) imaging, atomic force microscopy (AFM) analysis, surface profiling and Raman spectroscopy. However, these tests are often destructive and may be difficult to carry out at the wafer scale. Instead of these methods, this paper uses white-light interferometry surface profiling for material characterization and device inspection. Interferometry is quick, non-destructive, non-contact, and can offer a high density lateral resolution with extremely high sensitivities to the surface in the z-direction—all essential requirements for high volume manufacturing. Ar ange of devices is employed to illustrate the capabilities of white-light interferometry as a measurement and process characterization tool. It is shown that residual stress may be determined by using electrostatic actuation to pull fixed-fixed beams towards the substrate, and interferometry to record the beam deflection profile. Finite-element simulation software is employed to model this deflection, and to estimate the material properties which minimize the difference between the measured and simulated profiles. The results agree well with blanket film measurements.