Atomic structure of collision cascades in ion-implanted silicon and channeling effects
- 31 January 1985
- journal article
- Published by Elsevier in Materials Letters
- Vol. 3 (3), 67-72
- https://doi.org/10.1016/0167-577x(85)90001-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductorsMaterials Letters, 1984
- Computer simulation of collision cascades in monazitePhysical Review B, 1983
- Features of collision cascades in silicon as determined by transmission electron microscopyNuclear Instruments and Methods, 1981
- Reduction in Radiation Damage Due to Channeling of 51-MeV Iodine Ions in GoldPhysical Review Letters, 1966
- Computer Studies of the Slowing Down of Energetic Atoms in CrystalsPhysical Review B, 1963
- THE EFFECT OF CHANNELING ON DISPLACEMENT CASCADE THEORYApplied Physics Letters, 1963
- Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-FeldZeitschrift für Naturforschung A, 1947