High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductors
- 1 February 1984
- journal article
- Published by Elsevier in Materials Letters
- Vol. 2 (3), 211-218
- https://doi.org/10.1016/0167-577x(84)90026-0
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Computer simulation of collision cascades in monazitePhysical Review B, 1983
- Nucleation and growth rate of a-Si alloysApplied Physics Letters, 1983
- Interface structures during solid-phase-epitaxial growth in ion implanted semiconductors and a crystallization modelJournal of Applied Physics, 1982
- Redefined scattering cross section in monatomic solidsNuclear Instruments and Methods, 1980
- Crystalline to amorphous transformation in ion-implanted silicon: a composite modelJournal of Applied Physics, 1978
- A proposed method of calculating displacement dose ratesNuclear Engineering and Design, 1975
- Energy density and time constant of heavy-ion-induced elastic-collision spikes in solidsApplied Physics Letters, 1974
- Depth distribution of energy deposition by ion bombardmentComputer Physics Communications, 1974
- The Displacement of Atoms in Solids by RadiationReports on Progress in Physics, 1955