High quantum efficiency two color type-II InAs∕GaSb n-i-p-p-i-n photodiodes
- 17 March 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (11), 111112
- https://doi.org/10.1063/1.2898528
Abstract
A photodiode based on type-II superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and , presented quantum efficiencies (QEs) of 47% and 39% at . The devices can be operated as two diodes for simultaneous detection or as a single detector for sequential detection. In the latter configuration, the QEs at 5.3 and were measured as high as 40% and 39% at . The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a bias.
Keywords
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