Stress dependence of the paraexciton inO
- 15 February 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (4), 2562-2564
- https://doi.org/10.1103/physrevb.27.2562
Abstract
The energy shift of the paraexciton in O is measured by detecting its luminescence. The stress dependence, which differs significantly from that of the orthoexciton, agrees well with a theoretical calculation.
Keywords
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