A novel InGaAs PIN photodiode on semi-insulating InP
- 1 May 1986
- journal article
- research article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 18 (3), 174-177
- https://doi.org/10.1007/bf02030986
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Reduction of fall times in Ga0.47In0.53As photoconductive receivers through back gatingApplied Physics Letters, 1985
- PINFET hybrid optical receivers for 1.2 Gbit/s transmission systems operating at 1.3 and 1.55 μm wavelengthElectronics Letters, 1984
- 100 GHz bandwidth planar GaAs Schottky photodiodeElectronics Letters, 1983
- Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communicationsIEEE Transactions on Electron Devices, 1982
- Large-area back-illuminated InGaAs/InP photodiodes for use at 1 to 1.6 μm wavelengthOptics Communications, 1981