Nuclear reaction analysis of hydrogen in amorphous silicon and silicon carbide films
- 15 January 1980
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 168 (1-3), 499-504
- https://doi.org/10.1016/0029-554x(80)91300-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- Infrared vibrational spectra of rf-sputtered hydrogenated amorphous siliconPhysical Review B, 1978
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- Profiling hydrogen in materials using ion beamsNuclear Instruments and Methods, 1978
- Emploi de la réaction résonnante 1H(15N, αγ) pour l'obtention de profils de concentration d'hydrogène dans les matériauxRevue de Physique Appliquée, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Hydrogen implantation in silicon between 1.5 and 60 kevRadiation Effects, 1976
- Depth profiling ofandin solids using theresonancePhysical Review B, 1974
- A NEW utilization of11B ion beams: Hydrogen analysis by1H11B,α)α α nuclear reactionRadiation Effects, 1974
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970