EPITAXIAL GROWTH OF Si ON Si IN ULTRA HIGH VACUUM
- 1 September 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 5 (5), 108-110
- https://doi.org/10.1063/1.1754072
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Growth of epitaxial silicon layers by vacuum evaporationPhilosophical Magazine, 1964
- Epitaxial Growth of Silicon by Vacuum SublimationJournal of the Electrochemical Society, 1964
- Epitaxial Growth of Silicon by Vacuum SublimationNature, 1963
- Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporationVacuum, 1963
- Preparation of Evaporated Silicon FilmsReview of Scientific Instruments, 1963
- Method of preparing Si and Ge specimens for examination by transmission electron microscopyBritish Journal of Applied Physics, 1962
- Epitaxial Growth of Silicon by Vacuum EvaporationNature, 1962
- Cleaning of Silicon Surfaces by Heating in High VacuumJournal of Applied Physics, 1959
- Emissivity at 0.65 Micron of Silicon and Germanium at High TemperaturesJournal of Applied Physics, 1957
- A Radiant-Energy Heater Using an Ellipsoidal ReflectorIBM Journal of Research and Development, 1957