Crystallographic Orientation Dependence of Dielectric Constant in Epitaxially Grown SrTiO3 Films
- 1 July 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (7R)
- https://doi.org/10.1143/jjap.34.3597
Abstract
Dielectric constants were compared between SrTiO3(STO) (100) and (110) films, which were epitaxially grown on Pt-deposited MgO (100) and MgO(110) single crystals, respectively. Epitaxial STO films with different orientation were prepared by rf sputtering. The relations between crystallographic orientation of the dielectric films and the substrates were confirmed to be (100) STO|| (100) Pt|| (100) MgO and (110) STO|| (110) Pt|| (110) MgO. The dielectric constant of the (100) oriented STO film was greater than that of the (110) oriented one. The orientation dependence of the dielectric constant is discussed from the viewpoint of thermodynamic phenomenology. It is clarified that the difference in interface energy between the dielectric and the electrode has an important role in determining the difference in the dielectric constant.Keywords
This publication has 10 references indexed in Scilit:
- Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporationJournal of Applied Physics, 1994
- Epitaxial Growth and Dielectric Properties of (Ba0.24Sr0.76)TiO3 Thin FilmJapanese Journal of Applied Physics, 1994
- Dielectric Constant and Leakage Current of Epitaxially Grown and Polycrystalline SrTiO3 Thin FilmsJapanese Journal of Applied Physics, 1993
- Measurement and Thermodynamic Analyses of the Dielectric Constant of Epitaxially Grown SrTiO3 FilmsJapanese Journal of Applied Physics, 1993
- Enhancement of Optical Wave Mixing Characteristics of Photorefractive Bi12SiO20 Crystal by Moving Grating MethodJapanese Journal of Applied Physics, 1992
- Epitaxial Growth of SrTiO3 Films on Pt Electrodes and Their Electrical PropertiesJapanese Journal of Applied Physics, 1992
- Interface Structure and Dielectric Properties of SrTiO3 Thin Film Sputter-Deposited onto Si SubstratesMRS Proceedings, 1990
- Stress-induced ferroelectricity and soft phonon modes in SrTiPhysical Review B, 1976
- Dielectric Constant of Strontium Titanate at Low TemperaturesJournal of the Physics Society Japan, 1962
- XCVI. Theory of barium titanateJournal of Computers in Education, 1949