Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen Concentrations
- 16 September 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 85 (1), 133-147
- https://doi.org/10.1002/pssa.2210850116
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Oxygen-Related Donors Formed at 600 °C in Silicon in Dependence on Oxygen and Carbon ContentPhysica Status Solidi (a), 1983
- Multistep Repeated Annealing for CZ‐Silicon Wafers: Oxygen and Induced Defect BehaviorJournal of the Electrochemical Society, 1982
- Oxygen Precipitation Factors in SiliconJournal of the Electrochemical Society, 1982
- Precipitation and redistribution of oxygen in Czochralski-grown siliconApplied Physics Letters, 1980
- The Nature And Origin Of {113} Faults In Irradiated Silicon And GermaniumJournal of Microscopy, 1980
- Effect of Microscopic Growth Rate on Oxygen Microsegregation and Swirl Defect Distribution in Czochralski‐Grown SiliconJournal of the Electrochemical Society, 1979
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- The Heterogeneous Precipitation of Silicon Oxides in SiliconJournal of the Electrochemical Society, 1974
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- The influence of elastic strain on the shape of particles segregating in an alloyProceedings of the Physical Society, 1940