Mesotaxy: Single-Crystal Growth of Buried Silicide Layers
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- Mechanisms of buried oxide formation by ion implantationApplied Physics Letters, 1987
- Electrical Transport in thin Silicide FilmsMRS Proceedings, 1985
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon InterfaceJapanese Journal of Applied Physics, 1981
- Semiconducting properties of pure and Mn-doped chromium disilicidesJournal of Physics and Chemistry of Solids, 1978