Study of instabilities in amorphous-silicon thin-film transistors by transient current spectroscopy
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (1), 280-284
- https://doi.org/10.1109/16.43826
Abstract
No abstract availableKeywords
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