Material reaction and silicide formation at the refractory metal/silicon interface
- 9 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (23), 1600-1602
- https://doi.org/10.1063/1.96829
Abstract
Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low‐temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 Å or more) of reaction of refractory metals with Si, which are observed well below the temperatures normally associated with silicide growth in thicker films.Keywords
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