Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs
Open Access
- 2 November 2006
- journal article
- research article
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 1 (1), R34-R36
- https://doi.org/10.1002/pssr.200600049
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electrical and optical properties of amorphous indium zinc oxide filmsThin Solid Films, 2006
- Transport in high mobility amorphous wide band gap indium zinc oxide filmsPhysica Status Solidi (a), 2005
- Fully Transparent ZnO Thin‐Film Transistor Produced at Room TemperatureAdvanced Materials, 2005
- High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layerApplied Physics Letters, 2004
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- Transparent oxide optoelectronicsMaterials Today, 2004
- Quick-set thin filmsNature, 2004
- Pentacene thin film transistors fabricated on plastic substratesSynthetic Metals, 2003
- Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser depositionApplied Physics Letters, 2000
- Highly transparent and conductive ZnOIn2O3 thin films prepared by d.c. magnetron sputteringThin Solid Films, 1996