Molecular beam epitaxial growth and characterization of CuInSe2 and CuGaSe2 for device applications
- 3 January 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 1993-1999
- https://doi.org/10.1016/s0022-0248(01)02302-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Anion vacancies in CuInSe2Thin Solid Films, 2001
- Control of intrinsic defects in molecular beam epitaxy grown CuInSe2Journal of Crystal Growth, 1999
- High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxyApplied Physics Letters, 1996
- Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxyJournal of Applied Physics, 1996
- Growth of CuGaSe2 film by molecular beam epitaxyMicroelectronics Journal, 1996
- Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxyApplied Physics Letters, 1995
- Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cellsIEEE Transactions on Electron Devices, 1990
- Defect chemical explanation for the effect of air anneal on CdS/CuInSe2 solar cell performanceApplied Physics Letters, 1989