Planar doping of p-type ZnSe layers with lithium grown by molecular beam epitaxy
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4), 400-405
- https://doi.org/10.1016/0022-0248(92)90783-f
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- Atomic Layer Controlled Substitutional Doping With Lithium in ZnSeMRS Proceedings, 1991
- Characterization of p-type ZnSeJournal of Applied Physics, 1990
- Growth of p- and n-type ZnSe by molecular beam epitaxyJournal of Crystal Growth, 1989
- Planar doping with gallium of molecular beam epitaxial ZnSeApplied Physics Letters, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationJournal of Crystal Growth, 1987
- Optical Studies of Shallow Acceptors in CdS and CdSePhysical Review B, 1971
- Screening and Stark Effects Due to Impurities on Excitons in SemiconductorsJournal of the Physics Society Japan, 1970