Defect states in electron irradiated InGaAsP
- 1 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (7), 605-607
- https://doi.org/10.1063/1.94017
Abstract
Capacitance transient spectroscopy has been used to study defect states in 1-MeV electron irradiated liquid phase epitaxial InGaAsP. No states were found in the unirradiated material. Irradiation resulted in one electron trap with an electron emission activation energy of 0.38 eV and two hole traps with hole emission activations of 0.29 and 0.46 eV. Annealing behavior and the broad shape of the deep level transient spectroscopy peaks suggest that defect properties are affected by local ordering and stoichiometry in the material. All three defects recover significantly at temperatures <200 °C.Keywords
This publication has 10 references indexed in Scilit:
- Electron irradiation induced deep levels in p-InPApplied Physics Letters, 1982
- Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−y layers lattice matched to InP substratesApplied Physics Letters, 1982
- Defect states in electron bombarded n-InPApplied Physics Letters, 1982
- Influence of lattice mismatch on properties of InxGa1−xAs1−yPy layers epitaxially grown on InP substratesJournal of Applied Physics, 1981
- Ohmic contacts to p-type InP using Be-Au metallizationApplied Physics Letters, 1980
- The sulfur-related trap in GaAs1−xPxJournal of Applied Physics, 1979
- Observation of Deep Impurity Levels in In0.85GA0.15As0.39P0.61Japanese Journal of Applied Physics, 1979
- Study of the main electron trap inalloysPhysical Review B, 1977
- Observation of athermal defect annealing in GaPApplied Physics Letters, 1976
- Observation of Recombination-Enhanced Defect Reactions in SemiconductorsPhysical Review Letters, 1974