Epitaxial growth of VSi2 on (111) Si
- 15 March 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (6), 1887-1889
- https://doi.org/10.1063/1.334420
Abstract
Epitaxial VSi2 has been successfully grown on (111)Si for the first time. Best epitaxy was found in samples substrate heated at 400 °C during electron gun deposition of V thin films, followed by 400–1000 °C two‐step annealing in vacuum. The orientation relationships were determined to be (0001)VSi2∥(111)Si, (224̄0)VSi2∥(224̄)Si and (202̄0)VSi2∥(202̄)Si. Interfacial dislocations were identified to be of edge type with (1)/(6) 〈112〉 Burgers vectors. The average dislocation spacing was measured to be about 250 Å. The disparity between calculated and measured values of dislocation spacing is attributed to the sharing of lattice mismatch between dislocations and elastic strains at the VSi2/Si interface.Keywords
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