Characterisation and modeling of mismatch in MOS transistors for precision analog design
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 21 (6), 1057-1066
- https://doi.org/10.1109/jssc.1986.1052648
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Random error effects in matched MOS capacitors and current sourcesIEEE Journal of Solid-State Circuits, 1984
- High-precision MOS current mirrorIEE Proceedings I Solid State and Electron Devices, 1984
- Random errors in MOS capacitorsIEEE Journal of Solid-State Circuits, 1982
- Matching properties, and voltage and temperature dependence of MOS capacitorsIEEE Journal of Solid-State Circuits, 1981
- Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon SurfacesIEEE Journal of Solid-State Circuits, 1980
- Generalized guide for MOSFET miniaturizationIEEE Electron Device Letters, 1980
- Potential of MOS technologies for analog integrated circuitsIEEE Journal of Solid-State Circuits, 1978
- Sampled analog filtering using switched capacitors as resistor equivalentsIEEE Journal of Solid-State Circuits, 1977
- MOS sampled data recursive filters using switched capacitor integratorsIEEE Journal of Solid-State Circuits, 1977
- Statistical Circuit Design: Characterization and Modeling for Statistical DesignBell System Technical Journal, 1971