On the influence of microdefects on charge carriers in silicon
- 16 June 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 35 (2), 639-643
- https://doi.org/10.1002/pssa.2210350226
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Investigation of defects and striations in as-grown Si crystals by SEM using Schottky diodesApplied Physics Letters, 1975
- TEM observation of dislocation loops correlated with individual swirl defects in as-grown siliconApplied Physics Letters, 1974
- Comments on the distinction between ``striations'' and ``swirls'' in siliconApplied Physics Letters, 1974
- Scanning electron microscope studies of electroluminescent diodes of GaAs and GaP II. Analysis of GaAs line scan tracesPhysica Status Solidi (a), 1973
- Einfluß von Temper- und Diffusionsprozessen auf die Trägerlebensdauer in SiliziumPhysica Status Solidi (b), 1965
- Zur Messung der Diffusionslänge der Minoritätsträger in HalbleiternPhysica Status Solidi (b), 1964
- Photoströme in Halbleitern mit BarrierePhysica Status Solidi (b), 1964