Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment
- 13 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (11), 1007-1009
- https://doi.org/10.1063/1.100781
Abstract
An ultraclean hot‐wall low‐pressure chemical vapor deposition (CVD) system was developed and Si films were deposited on single‐crystal Si and SiO2 using ultraclean SiH4 and H2 gases in the temperature range 600–850 °C under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on SiO2 was found, and low‐temperature Si selective deposition and epitaxy on Si were achieved without addition of HCl under deposition conditions where only nonselective polycrystalline Si growth could be obtained in conventional CVD systems.Keywords
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