A two-terminal nanocrystalline silicon memory device at room temperature
- 1 November 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (11), 1328-1332
- https://doi.org/10.1088/0268-1242/13/11/018
Abstract
We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage characteristics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron micrographs show that the channel consists of 3-5 nm silicon grains. A model of single charge trapping controlled conduction through the device channel is suggested.Keywords
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