Simple general analytical solution to the minority carrier transport in heavily doped semiconductors
- 15 December 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (12), 3476-3478
- https://doi.org/10.1063/1.333898
Abstract
A rigorous analytical evaluation of minority carrier current in a heavily doped region (such as emitter) of a semiconductor device is presented that includes position-dependent band-gap narrowing, position-dependent mobility, and position-dependent lifetime. In addition, the analysis takes into account the possible finite surface recombination velocity.Keywords
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