Energy gap in Si and Ge: Impurity dependence
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (5), 2634-2646
- https://doi.org/10.1063/1.327994
Abstract
The energy gap in silicon and germanium is calculated as a function of the concentration of donor impurities. The results are compared with the available data from optical experiments and devices. Previous theories are critically reviewed.Keywords
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