On the high-frequency characteristics of substrate resistance in RF MOSFETs
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (12), 604-606
- https://doi.org/10.1109/55.887480
Abstract
The high-frequency (HF) behavior of substrate components in MOSFETs is studied at different bias conditions for a 0.35 /spl mu/m BICMOS technology in the frequency range up to 10 GHz. It was found that the observed strong bias dependence of the real part of admittance y/sub 22/, Re{y/sub 22/}, is mainly contributed by the channel conductance. A very weak bias dependence of substrate resistance was found after deembedding the measured y/sub 22/ to remove the influence of channel resistance R/sub ds/ and gate-to-drain capacitance C/sub gd/. The results are key to the understanding and modeling of the HF behavior of MOSFET substrate components for RF IC design.Keywords
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