The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition
- 1 July 1984
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (4), 655-671
- https://doi.org/10.1007/bf02653987
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- OMVPE growth of InP using TMInJournal of Crystal Growth, 1983
- Low pressure metalorganic chemical vapor deposition of InP and related compoundsJournal of Electronic Materials, 1983
- An analytical evaluation of GaAs grown with commercial and repurified trimethylgalliumJournal of Electronic Materials, 1982
- An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InPJournal of Applied Physics, 1982
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- Liquid Phase Epitaxy of InPJournal of the Electrochemical Society, 1974
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1973
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Electron Transport in GaAsPhysical Review B, 1971