Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review
- 28 February 1986
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (2), 167-172
- https://doi.org/10.1016/0038-1101(86)90035-3
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitorsJournal of Applied Physics, 1985
- On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperaturesIEEE Transactions on Electron Devices, 1984
- Persistent photoconductivity in AlGaAs–GaAs heterostructuresJournal of Vacuum Science & Technology B, 1984
- Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 KIEEE Transactions on Electron Devices, 1983
- Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctionsJournal of Electronic Materials, 1983
- Heterojunction-induced phenomena in Hall effect and photoconductivity measurements of epitaxial AlxGa1−xAsJournal of Applied Physics, 1983
- Instabilities in modulation doped field-effect transistors (MODFETs) at 77 KElectronics Letters, 1983
- Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxyApplied Physics Letters, 1982
- Photoconductivity effects in extremely high mobility modulation-doped (Al,Ga)As/GaAs heterostructuresJournal of Applied Physics, 1982
- Long-lifetime photoconductivity effect in n-type GaAlAsApplied Physics Letters, 1977