Determination of lighter impurities on silicon by 90° forward ion scattering through thin targets
- 15 January 1972
- journal article
- other
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 98 (2), 375-377
- https://doi.org/10.1016/0029-554x(72)90122-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Preparation of supported, large-area, uniformly thin silicon films for particle-channeling studiesNuclear Instruments and Methods, 1971
- Evaluation of Silicon Nitride Layers of Various Composition by Backscattering and Channeling-Effect MeasurementsJournal of Applied Physics, 1971
- Electrochemically Thinned N/N+ Epitaxial Silicon—Method and ApplicationsJournal of the Electrochemical Society, 1971
- OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDEApplied Physics Letters, 1970
- Analysis of amorphous layers on silicon by backscattering and channeling effect measurementsSurface Science, 1970
- THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERINGApplied Physics Letters, 1969
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967