Preparation of supported, large-area, uniformly thin silicon films for particle-channeling studies
- 15 July 1971
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 94 (3), 435-442
- https://doi.org/10.1016/0029-554x(71)90006-1
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Anodic Dissolution of N+ SiliconJournal of the Electrochemical Society, 1971
- Preparation of thin silicon films for transmission electron microscopy by photolithography and dynamic etchingJournal of Physics E: Scientific Instruments, 1970
- Thin silicon device technologyJournal of Physics D: Applied Physics, 1970
- Application of Preferential Electrochemical Etching of Silicon to Semiconductor Device TechnologyJournal of the Electrochemical Society, 1970
- Preparation of Thin Silicon Crystals by Electrochemical Thinning of Epitaxially Grown StructuresJournal of the Electrochemical Society, 1970
- Method for producing large Si films for preselected imperfection analysisJournal of Scientific Instruments, 1965
- Uniform and Stable dE/dx P-n Junction Particle DetectorsIEEE Transactions on Nuclear Science, 1964
- Method of preparing Si and Ge specimens for examination by transmission electron microscopyBritish Journal of Applied Physics, 1962
- Sample Preparation for Transmission Electron Microscopy of GermaniumReview of Scientific Instruments, 1961
- The preparation of thin films of germanium and siliconBritish Journal of Applied Physics, 1961