Observations on the formation and etching of platinum silicide
- 15 January 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (2), 49-51
- https://doi.org/10.1063/1.1655089
Abstract
When thin‐film platinum and single‐crystal silicon are interdiffused, [inverted lazy s] 100 Å of SiO2 is found at the PtSi surface. The silica protects the silicide from attack by the aqua regia commonly used to remove unreacted Pt. If the silica is stripped, PtSi on Si will dissolve in aqua regia even faster than Pt. These findings are applicable to contact technology for silicon devices and integrated circuits.Keywords
This publication has 3 references indexed in Scilit:
- Chemical Vapor Deposition of Thin-Film PlatinumJournal of the Electrochemical Society, 1973
- Formation of silicon oxide over gold layers on silicon substratesJournal of Applied Physics, 1972
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971