Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents
- 1 August 2012
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 103, 86-92
- https://doi.org/10.1016/j.solmat.2012.04.002
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- New world record efficiency for Cu(In,Ga)Se2 thin‐film solar cells beyond 20%Progress In Photovoltaics, 2011
- Solar cell efficiency tables (version 37)Progress In Photovoltaics, 2010
- Direct Evidence for a Reduced Density of Deep Level Defects at Grain Boundaries ofThin FilmsPhysical Review Letters, 2010
- Large Neutral Barrier at Grain Boundaries in Chalcopyrite Thin FilmsPhysical Review Letters, 2010
- Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cellsApplied Physics A, 2008
- Electrically Benign Behavior of Grain Boundaries in PolycrystallineFilmsPhysical Review Letters, 2007
- Evidence for a Neutral Grain-Boundary Barrier in ChalcopyritesPhysical Review Letters, 2006
- Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrierApplied Physics Letters, 2005
- Electrical activity at grain boundaries ofthin filmsPhysical Review B, 2005
- Anomalous Grain Boundary Physics in Polycrystalline: The Existence of a Hole BarrierPhysical Review Letters, 2003