On the effect of gate oxide thickness upon the hall mobility and other magneto-electrical characteristics in most structures
- 31 January 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (1), 41-45
- https://doi.org/10.1016/0038-1101(74)90112-9
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Magneto-electrical properties of silicon most structuresSolid-State Electronics, 1971
- Magnetic sensitivity of a MAGFET of uniform channel current densitySolid-State Electronics, 1971
- Hall effect measurements of hole mobility in an inversion layer at the Si-SiO2 interfacePhysica Status Solidi (a), 1971
- Carrier mobility in silicon MOST'sSolid-State Electronics, 1969
- Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon SurfacesJapanese Journal of Applied Physics, 1969
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- A Metal-Oxide-Semiconductor (MOS) Hall elementSolid-State Electronics, 1966
- Surface mobility of holes in thermally oxidized silicon measured by the field effect and the hall effectSurface Science, 1964
- Hall Measurements on Silicon Field Effect Transistor StructuresIBM Journal of Research and Development, 1964