Si–H bonding in low hydrogen content amorphous silicon films as probed by infrared spectroscopy and x-ray diffraction
- 15 February 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (4), 1650-1658
- https://doi.org/10.1063/1.372073
Abstract
A systematic series of hydrogenated amorphous silicon (a-Si:H films) has been deposited by the hot wire chemical vapor deposition (HWCVD) technique onto crystalline silicon substrates, and the H bonding has been examined by infrared spectroscopy. All deposition parameters were kept the same, except that the substrate temperature (TS) was varied to affect changes in the film H content. Although the peak position of the Si–H stretch mode changes minimally with increasing substrate temperature, the stretch mode shape changes, becoming more intense (compared to the height of the wag mode) and considerably narrower. We show, through annealing experiments, that this narrow stretch mode may be a universal feature of low H content films, and suggest interpretations for this finite (narrow) linewidth. By correlations with x-ray diffraction data, we also show that the narrowing of the stretch mode peak for low H content HWCVD films is an indication of improved lattice ordering, and suggest that this improved ordering might also exist for other types of low H content a-Si:H films as well. However, for the as-grown HWCVD films the narrowing of the stretch mode peak width at lower H contents does not completely compensate for the increase in peak height, and as a result the integrated intensity of the peak mode (relative to that of the wag mode) increases. We comment on the differences between as-grown, low H content a-Si:H HWCVD films and high H content films annealed to reduce the film H content to comparable levels, and discuss possible reasons for these intensity changes versus sample H content.Keywords
This publication has 32 references indexed in Scilit:
- Amorphous Solid without Low Energy ExcitationsPhysical Review Letters, 1997
- Observation of Improved Structural Ordering in Low H Content, Hot wire Deposited a-Si:HMRS Proceedings, 1997
- New Hydrogen Distribution ina-Si:H: An NMR StudyPhysical Review Letters, 1996
- Factors Influencing the Quality of a-Si:H Films Deposited by the “HOT WIRE” TechniqueMRS Proceedings, 1994
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire techniqueAIP Conference Proceedings, 1991
- Deposition of device quality, low H content a-Si:H by the hot wire techniqueJournal of Non-Crystalline Solids, 1991
- Study on catalytic chemical vapor deposition method to prepare hydrogenated amorphous siliconJournal of Applied Physics, 1989
- Production of high-quality amorphous silicon films by evaporative silane surface decompositionJournal of Applied Physics, 1988
- a-Si : H produced by high-temperature thermal decomposition of silaneJournal of Applied Physics, 1979