Electromigration in a single crystalline submicron width aluminum interconnection
- 7 January 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (1), 42-44
- https://doi.org/10.1063/1.104431
Abstract
Electromigration properties in a single crystalline submicron width aluminuminterconnection formed on Si(111) have been examined by resistance change measurements and in situ observations using scanning electron microscopy. It was observed that single crystalline aluminum has an extremely high resistance to electromigration‐induced open circuit failures, when compared to polycrystallinecopper and aluminum. The mechanism for the high resistance is considered to be a large activation energy, resulting from lattice diffusion. A tendency for void formation to become parallel to the longitudinal direction of the interconnection assisted the life time prolongation.Keywords
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