Measurement of junction temperature of an AlGaAs/GaAs heterojunction bipolar transistor operating at large power densities
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (2), 358-360
- https://doi.org/10.1109/16.370056
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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