1.0-GHz thin-film bulk acoustic wave resonators on GaAs
- 15 October 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (8), 750-751
- https://doi.org/10.1063/1.94484
Abstract
This letter reports on a new fabrication technique and experimental results obtained on bulk acoustic wave resonators using thin piezoelectric composite films of A1N on GaAs insulating substrates. The fabrication involves only a wafer top side planar processing compatible with integrated circuit technology. Resonators have been made in the frequency range UHF to 1 GHz in order to demonstrate the fabrication technique and evaluate material performance in resonator devices. Both longitudinal and shear wave resonators have been measured with temperature coefficients of −24 and −26.5 ppm/°C, respectively. Shear wave results were obtained from tilted c‐axis films grown in a dc planar magnetron sputtering system.Keywords
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