Photoluminescence study of the shallow acceptor states in n-type GaAs
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9), 3882-3884
- https://doi.org/10.1063/1.322132
Abstract
The 4 °K photoluminescence spectra of vapor phase epitaxial GaAs (n) layers with doping levels from 1013 to 3×1016 cm−3 have been studied. Taking into account the shift of the donor‐acceptor (D‐A) transitions lines versus the neutral donor concentration, it is shown that five shallow acceptor states are involved; their binding energies are determined, and compared with results obtained in other laboratories. Besides carbon (Ea=27 meV), zinc (31 meV), silicon (35 meV), and germanium (41 meV), there appears an acceptor level at 22 meV which had not previously been observed.Keywords
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