A nonvolatile memory element based on a quaterthiophene field-effect transistor
- 31 December 2004
- journal article
- research article
- Published by Elsevier in Materials Letters
- Vol. 59 (10), 1165-1168
- https://doi.org/10.1016/j.matlet.2004.12.020
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- A nonvolatile memory element based on an organic field-effect transistorApplied Physics Letters, 2004
- All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate InsulatorAdvanced Materials, 2004
- Ferroelectric Pb(Zr0.52Ti0.48)/SiC field-effect transistorApplied Physics Letters, 2003
- Easily Processable Phenylene−Thiophene-Based Organic Field-Effect Transistors and Solution-Fabricated Nonvolatile Transistor Memory ElementsJournal of the American Chemical Society, 2003
- Memory effects of pentacene MFS-FETSynthetic Metals, 2003
- Organic field-effect transistors with polarizable gate insulatorsJournal of Applied Physics, 2002
- Organic Thin Film Transistors for Large Area ElectronicsAdvanced Materials, 2002
- Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulatorApplied Physics Letters, 2001
- Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write OperationJapanese Journal of Applied Physics, 1997
- Physics of the ferroelectric nonvolatile memory field effect transistorJournal of Applied Physics, 1992