Optical effects in ternary and quaternary compound MESFETs
- 31 January 1984
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 24 (1), 11-13
- https://doi.org/10.1016/0020-0891(84)90041-1
Abstract
No abstract availableKeywords
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- InP/InGaAs heterojunction phototransistorsIEEE Journal of Quantum Electronics, 1981
- Theoretical Analysis of Simplified Four Wavelength Division Solar Cell SystemJapanese Journal of Applied Physics, 1981
- An integrated photoconductive detector and waveguide structureApplied Physics Letters, 1980