Optically-Gated InP-MISFET: A New High-Gain Optical Detector
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (1R)
- https://doi.org/10.1143/jjap.21.104
Abstract
A new optical detector with an enhancement-mode MISFET structure is demonstrated. This device consists of a semi-transparent gate metal and a pyrolitic Al2O3 insulator film formed on an Fe-doped semi-insulating InP-crystal. A photocurrent-gain higher than 103 has been obtained under application of a gate bias. Moreover, a gate voltage lower than 2 V is high enough to give this large amplification. The amplification mechanism is explained by an increase in the surface-channel conductivity via the development of an electron quasi-Fermi level shift toward the conduction-band edge under the illumination.Keywords
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