Theoretical model for the oxidation of silicon
- 1 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7), 736-737
- https://doi.org/10.1063/1.96021
Abstract
A theoretical model for the rapid growth of silicon dioxide in a dry oxygen ambient is presented. The model is based on the fact that silicon dioxide has micropores through which the oxygen molecules can travel easily. The theory is compared to experiment and shows good agreement.Keywords
This publication has 5 references indexed in Scilit:
- High Pressure Oxidation of Silicon in Dry OxygenJournal of the Electrochemical Society, 1982
- Direct Evidence for 1 nm Pores in “Dry”Thermal SiO2 from High Resolution Transmission Electron MicroscopyJournal of the Electrochemical Society, 1980
- Silicon Oxidation Studies: Some Aspects of the Initial Oxidation RegimeJournal of the Electrochemical Society, 1978
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965