Reaction rate constant of Si atoms with SiH4molecules in a RF silane plasma

Abstract

Ultraviolet absorption spectroscopy using a ring dye laser and a hollow cathode lamp was applied to measurement of Si(3p², ¹D₂) and Si(3p², ³P₂) atom density decay in the afterglow of a radio frequency SiH₄-Ar plasma. The dependence of the Si density decay rate on SiH₄ and Ar partial pressure and also on the radio frequency input power was investigated, from which Si(3p²,¹D₂)-SiH₄ reaction rate constant was determined to be (7.4+or-0.4)*10^-10 cm³ molecule^-1 s^-1, the Si(3p², ³P₂)-SiH₄ reaction rate constant (3.5+or-1.0)*10^-10 cm³ molecule^-1 s^-1 and the diffusion coefficient for Si(3p², ¹D₂) in Ar (at 320 K) (4.0+or-0.8)*10⁴ cm² Pa s^-1.