Substrate temperature limits for epitaxy of InP by MBE
- 15 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (8), 617-620
- https://doi.org/10.1063/1.91228
Abstract
The temperature range within which epitaxial unintentionally doped InP can be deposited from In and P2 beams by MBE on to (100) InP substrates has been determined to be 100–405 °C. Above 410 °C whisker growth from In droplets via a vapor‐liquid‐solid process occurs; below 95 °C polycrystalline layers result on account of the nondissociation of P2.Keywords
This publication has 10 references indexed in Scilit:
- Electrical properties of n-type epitaxial indium phosphide filmsJournal of Applied Physics, 1978
- Temperature range for growth of autoepitaxial GaAs films by MBEJournal of Crystal Growth, 1978
- Molecular Beam Epitaxial Growth of InPJournal of the Electrochemical Society, 1977
- Semiconductor superfine structures by computer-controlled molecular beam epitaxyThin Solid Films, 1976
- An X-ray cylindrical texture camera for the examination of thin filmsJournal of Applied Crystallography, 1975
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Growth of indium phosphide films from In and P2 beams in ultra-high vacuumJournal of Physics D: Applied Physics, 1974
- The isoelectronic trap bismuth in indium phosphideSolid State Communications, 1971
- Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid MechanismJournal of Applied Physics, 1965
- Electron Mobility in InPJournal of the Electrochemical Society, 1958