Double zinc diffusion fronts in InP—Theory and experiment
- 15 September 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (6), 594-596
- https://doi.org/10.1063/1.94436
Abstract
Diffusion of Zn or Cd in n‐type III‐V material has been extensively used for forming p‐n junctions in lasers and detectors. However, if the substrate material used for diffusion has an electron concentration less than 5×1016 cm−3, two separate diffusion fronts will appear which alter completely the electrical property of the junction. We have investigated this phenomenon by electron beam induced current (EBIC) and secondary ion mass spectroscopy (SIMS). A theory is proposed, for the first time, in good agreement with experiment.Keywords
This publication has 5 references indexed in Scilit:
- Low-temperature Zn- and Cd-diffusion profiles in InP and formation of guard ring in InP avalanche photodiodesIEEE Transactions on Electron Devices, 1982
- Formation of p+-p−-n− junctions in InP by Cd diffusionApplied Physics Letters, 1980
- Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductorsApplied Physics Letters, 1979
- The electrical properties of zinc diffused indium phosphideSolid-State Electronics, 1976
- Diffusion and solubility of zinc in indium phosphideSolid-State Electronics, 1964