AlGaN-GaN heterostructure FETs with offset gate design
- 1 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (14), 1255-1257
- https://doi.org/10.1049/el:19970818
Abstract
The DC performance of AlGaN-GaN heterojunction field effect transistors (HFETs) with an offset gate design is reported for the first time. The breakdown voltage for these offset gate devices exhibited a strong dependence on the gate-to-drain separation and the maximum transconductance increased almost linearly with the source-to-gate distance.Keywords
This publication has 5 references indexed in Scilit:
- Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperaturesElectronics Letters, 1997
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistorsApplied Physics Letters, 1996
- Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistorsIEEE Electron Device Letters, 1996
- Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequencyElectronics Letters, 1996