Threshold-Voltage Temperature Drift in Ion-Implanted MOS Transistors
- 1 April 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (2), 291-298
- https://doi.org/10.1109/jssc.1982.1051731
Abstract
No abstract availableKeywords
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