High contrast, submilliwatt power InGaAs/GaAs strained-layer multiple-quantum-well asymmetric reflection modulator
- 16 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (25), 3216-3218
- https://doi.org/10.1063/1.105736
Abstract
A high contrast, low power optical reflection modulator with an InGaAs/GaAs strained-layer multiple quantum well (MQW) nonlinear spacer is demonstrated. Taking advantage of large absorptive and dispersive nonlinearities near the exciton peak, on/off contrast ratios exceeding 29 dB are achieved with submilliwatt pump powers at room temperature.Keywords
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