Atomic Layer Control of SrCuOx and Layer-By-Layer Growth of Bi2Sr2Can-1CunO2n+4 (n=1 to 5) on SrTiO3 (100) by Laser Molecular-Beam-Epitaxy
- 1 March 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (3B), L331
- https://doi.org/10.1143/jjap.31.l331
Abstract
The growth of SrCuO x thin layer and Bi2Sr2Ca n-1Cu n O2n+4 on SrTiO3 (100) substrate has been studied. When Sr and Cu are supplied simultaneously to the substrates to form SrCuO x , either a SrO or CuO2 layer can form the surface layer depending upon the composition of the substrate surface. By the successive supply of the subunit-cell layers of Bi2Sr2Ca n-1Cu n O2n+4, the structures with n=1 to 5 are formed. The reflection high energy electron diffraction pattern shows streaks all through the growth, indicating two-dimensional layer growth in all the steps controlled within the monolayer accuracy.Keywords
This publication has 7 references indexed in Scilit:
- Molecular beam epitaxy of Bi2Sr2CuOx and Bi2Sr2Ca0.85Sr0.15Cu2Ox ultra thin films at 300°CJournal of Crystal Growth, 1991
- Atomic layer and unit cell layer growth of (Ca,Sr)CuO2 thin film by laser molecular beam epitaxyApplied Physics Letters, 1991
- Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV IrradiationJapanese Journal of Applied Physics, 1991
- New cuprate superconductorsNature, 1991
- Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compoundsJournal of Crystal Growth, 1990
- Low-temperature formation of multilayered Bi(Pb)-Sr-Ca-Cu-O thin films by successive deposition using laser ablationApplied Physics Letters, 1989
- Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growthApplied Physics Letters, 1985