The distribution of mobile carriers in the pinch-off region of an insulated-gate field-effect transistor and its influence on device breakdown
- 31 August 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (8), 723-733
- https://doi.org/10.1016/0038-1101(71)90151-1
Abstract
No abstract availableKeywords
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