Effect of H2 on residual impurities in GaAs MBE layers
- 15 December 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (12), 1020-1022
- https://doi.org/10.1063/1.90246
Abstract
The introduction of hydrogen during the MBE growth of GaAs is shown to produce a major improvement in the electrical properties of the epitaxial layers. The observed increase in 77 K electron mobilities reflects a significant decrease in total ionized impurity concentration. Evidence is presented that the dominant residual impurities in MBE‐grown GaAs are oxygen and carbon.Keywords
This publication has 6 references indexed in Scilit:
- Invited: Preparation and Properties of GaAs Devices by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- Invited: Growth and Doping Kinetics in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1975
- Acceptor levels in gallium arsenide (luminescence measurements)Journal of Physics C: Solid State Physics, 1973
- Ionized Impurity Density in n-Type GaAsJournal of Applied Physics, 1970
- Luminescence of GaAs Grown in OxygenJournal of Applied Physics, 1963